MEMS高G值加速度传感器设计  

Design of MEMS high G Accelerometer

作　　者：石云波[1] 祁晓瑾[1] 刘俊[1] 孟美玉[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,山西太原030051

出　　处：《系统仿真学报》2008年第16期4306-4309,共4页Journal of System Simulation

基　　金：山西省青年学术带头人项目资助;教育部新世纪优秀人才基金资助(NCET-04-0259).

摘　　要：针对特殊场合的测试需求,设计了四端全固支的高g值梁岛结构加速度传感器,结构中采用在质量块背部KOH腐蚀的方法,减轻质量块质量,且减小质量块质心与梁中心面的相对距离。利用力学计算与工艺相结合,确定了结构尺寸;通过Ansys软件对其进行应力分析、模态分析,得到了结构的输出灵敏度与一阶固有频率;最后利用瞬态分析验证了该结构能够承受20,000g的瞬态冲击,符合设计要求。A high g piezoresistive accelerometer with four-terminal fixed beam-island structure was designed for the purpose of testing in special demand. The weight of the mass and the distance between the center of mass and beams were both decreased by KOH etch at the back of the mass. Combining the calculation of mechanics and the technology, the dimension of the structure was determined. Through the analysis of the stress and the model by Ansys, the sensitivity of the output and the natural frequency of the first model were obtained. In the end, it is testified that the structure can bear transient attack of 20, 000g using transient model analysis. It is concluded that the structure can meet the necessity of design by experiments.

关 键 词：微机电系统 高G值 加速度传感器 仿真 

分 类 号：TP212.9[自动化与计算机技术—检测技术与自动化装置]