激光干涉结晶法制备一维周期结构的纳米硅阵列  

One-dimensional periodic nanocrystalline silicon arrays made by pulsed laser interference crystallization

作　　者：姚尧[1] 方忠慧[1] 周江[1] 李伟[1] 马忠元[1] 徐骏[1] 黄信凡[1] 陈坤基[1] 宫本恭幸[2] 小田俊理[2] 

机构地区：[1]南京大学物理系,固体微结构物理国家重点实验室,南京210093 [2]东京工业大学物理电子学系

出　　处：《物理学报》2008年第8期4960-4965,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:90301009;60571008;60471021);国家重点基础研究发展规划(批准号:2006CB932202)资助的课题~~

摘　　要：利用激光干涉结晶方法,采用周期为400nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明:1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si:H膜厚度从10nm降至4nm,通过控制激光的能量密度,每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显示出清晰的nc-Si晶格像.One-dimensional periodic nanocrystalline silicon（nc-Si） arrays were fabricated by laser interference crystallization combined with one-dimensional phase shifting grating mask（PSGM）.The laser energy density irradiated on the surface of samples with different thicknesses of a-Si：H can be modulated by the PSGM with periodicity of 400 nm.Raman spectra confirmed the crystallization of the irradiated stripe-patterned area of the samples.The transmission electron microscopic and atomic force microscopic images demonstrate that the periodicity of one-dimensional nc-Si arrays is the same as that of the PSGM.And by controlling the laser energy density,a stripe width of 30 nm in each period was obtained as the thickness of a-Si：H decreased from 10 to 4 nm.The high resolution transmission electron microscope images show the clear crystalline lattice of nc-Si within the stripe patterns.

关 键 词：纳米硅 激光干涉结晶 移相光栅 定域晶化 

分 类 号：TN24[电子电信—物理电子学]