低速p/i界面缓冲层对高速沉积微晶硅太阳电池性能的影响  

Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells

作　　者：韩晓艳[1] 侯国付[1] 李贵君[1] 张晓丹[1] 袁育杰[1] 张德坤[1] 陈新亮[1] 魏长春[1] 孙健[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津300071

出　　处：《物理学报》2008年第8期5284-5289,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:2006CB202602,2006CB202603);国家自然科学基金(批准号:60506003);天津市国家科技计划配套基金(批准号:07QTPTJC29500)资助的课题~~

摘　　要：在采用高压高功率的甚高频等离子体增强化学气相沉积(VHF-PECVD)技术高速沉积微晶硅(μc-Si:H)太阳电池过程中,产生的高能离子对薄膜表面的轰击作用会降低薄膜质量和破坏p型掺杂层(p层)与本征层(i层)之间的界面特性.针对该问题提出在电池中引入低速沉积的p/i界面层的方法,即在p层上先低速沉积一薄层本征μc-Si:H薄膜,然后再高速沉积本征μc-Si:H薄膜.实验结果表明,引入低速方法沉积的界面层有效地提高了p/i界面特性和i层微结构的纵向均匀性,而随界面层厚度的增加,i层中的缺陷态先降低后增加,这使得界面层厚度存在着最佳值,实验得到低速沉积界面层的最佳厚度为100nm,用该厚度制备得到的电池比没有界面层的电池光电转换效率提高了约一个百分点.通过优化其他条件,采用0.85nm/s的沉积速率制备得到单结μc-Si:H太阳电池的光电转换效率可以达到8.11%.In the process of the high growth rate μc-Si：H film deposited by very high frequency plasma enhanced chemical vapor deposition（VHF-PECVD）,the high energy ion impinging on the growing surface could deteriorate the device performance.Incorporation of a low growth rate intrinsic μc-Si：H p/i buffer layer was advanced in this paper.The results show that the introduced low growth rate buffer layer could improve the characteristics of p/i interface and the vertical uniformity of the intrinsic layer.It was found that the defects in intrinsic layer first decreased and then increased with increasing thickness of the buffer layer.These results led to an optimal thickness for the buffer layers.The efficiency of solar cells was increased about 1% when the thickness was optimized.As a result,the efficiency of 8.11% has been achieved at an i-layer deposition rate of 8.5nm/s.

关 键 词：μc-Si:H太阳电池 甚高频等离子体增强化学气相沉积 p/i界面层 

分 类 号：TM914.4[电气工程—电力电子与电力传动]