阿伏加德罗常数测量中单晶硅密度的绝对测量  

The Absolute Measurement of Density of Silicon Crystals for Determing Avogadro Constant

作　　者：罗志勇[1] 杨丽峰[1] 顾英姿[1] 郭立功[1] 丁京安[1] 陈朝晖[1] 

机构地区：[1]中国计量科学研究院,北京100013

出　　处：《计量学报》2008年第3期211-215,共5页Acta Metrologica Sinica

基　　金：科技部科技基础性工作专项(2002DEA20014)

摘　　要：基于改进型五幅算法,利用压力扫描原理设计出腔长可变式法-珀标准具和柔性铰链微位移平台,实现了标准具腔长和硅球表面与标准具之间的相移测量,建立了一套技术原理新颖、提高潜力较大的相移法精密测长系统。该测量系统对硅球直径的测量准确度优于3 nm,单晶硅密度的测量不确定度达到1×10-7。Based on the improved five-interferogram algorithm, a novel interferometer with special etalon is developed. The distance between two standard surfaces of this etalon can be changed by pressure in vertical direction to realize phase shift and can be come back with accuracy better than O. 1 nm when the pressure is free. The measurement standard uncertainty of diameter of the silicon sphere is better than 3 nm and measurement standard uncertainty of the silicon crystal density is 1 × 10^-7 .

关 键 词：计量学 阿伏加德罗常数 密度基准 五幅算法 单晶硅球 相移法 标准具 

分 类 号：TB933[一般工业技术—计量学]