用MOCVD方法制备ZnO：B透明导电薄膜及其性能优化  

CHARACTERISTICS AND GROWTH OF ZnO:B THIN FILMS BY MOCVD PROCESS

作　　者：孟凡英[1] 江民林[1] 余跃波[1] 胡宇[1] 

机构地区：[1]上海交通大学物理系太阳能研究所,上海200240

出　　处：《太阳能学报》2008年第8期939-943,共5页Acta Energiae Solaris Sinica

摘　　要：采用金属氧化物化学气相沉积(MOCVD)方法在石英衬底上生长氧化锌(ZnO)薄膜。改变薄膜材料的生长温度和掺杂气体硼烷(B_2H_6)的流速,制备一系列薄膜样品。通过X-射线衍射(XRD)、扫描电子显微镜(SEM)、透过率、反射率、电阻率和原子力显微镜(AFM)等测试分析,研究了材料生长温度和B_2H_6流速对薄膜生长速度、微观结构、薄膜晶向、光学透过率、光学禁带宽度、电阻率、表面粗糙度等特征参量的影响,经过优化实验条件,获得薄膜电阻率在10^(-3)Ω·cm量级,可见光区域光学透过率在85%以上,成功制备低电阻率高光学透过率的ZnO透明导电薄膜。Boron-doped ZnO thin films were deposited on the fused silicon substrates by MOCVD system in this work. The samples were fabricated with various growth temperatures and various flow rates of BE I-I6. Based on the measurement of XRD, SEM, AFM, Hall Effect, and optical transmittance and reflectivity, the characteristics of the thin films, including the crystal plane, optical transmittance, optical band gap energy, resistivity, roughness, were investigated. As a result of optimizing the experimental parameters, the electrical resistivity of n-ZnO： B film is about 10^-3Ω·cm , and the average optical transmittance in the visible light region is over 85%. Thus the transmittance conductive oxide （TCO） of ZnO ：B with low resistivity and high transmittance was successfully obtained by MOCVD in this work.

关 键 词：ZnO:B 光学透过率 电阻率 透明导电薄膜(TCO) MOCVD 

分 类 号：TN304[电子电信—物理电子学]