直角坐标激光直写的动态曝光模型  

Dynamic exposure model of laser direct writing in Cartesian coordinate

作　　者：张山[1] 谭久彬[1] 王雷[1] 金占雷[1] 

机构地区：[1]哈尔滨工业大学超精密光电仪器工程研究所,黑龙江哈尔滨150001

出　　处：《光学精密工程》2008年第8期1354-1360,共7页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.50675052)

摘　　要：在兼顾胶层的光吸收特性、直写光束的高斯分布特征以及直写光束与胶层相对运动的情况下,建立了直角坐标激光直写的动态曝光模型以有效预测线条的线宽和侧壁角。仿真实验表明:以恒值高斯光强曝光时,该模型与等效仿真条件下的Dill曝光模型仿真结果完全一致,进一步证明了该模型的有效性和正确性,解决了目前在激光直写中存在的只能预测线宽或在忽略光刻胶吸收作用的情况下粗略估计直写线条轮廓的问题。同时,基于该模型分别分析了直写光功率和直写速度对线条轮廓的影响机理,为优化激光直写工艺的加工参量提供了一种有效的分析途径。A new dynamic exposure model was proposed to predict the laser direct writing quality in Cartesian coordinate exactly. By considering the effect of photoresist absorbing beam energy, the Gaussian distribution of writing beam and the dynamic exposure process, numerical simulation results indicate that when the incident laser beam is shape of constant Gauss, the results obtained by pro- posed model agree well with that by Dill model under equivalent conditions. The model makes up the shortcomings of the traditional models and can be taken as an appropriate solution to the dynamic ex- posure process. Based on the model, the influences of the direct writing power and velocity on the profile of writing line are also analyzed, which can be considered as an effect analysis method for optimizing the parameters of laser direct writing.

关 键 词：激光直写光刻 曝光量分布 Dill曝光模型 线条轮廓 

分 类 号：TN305.7[电子电信—物理电子学]