退火时间对ZnO:Al薄膜性能的影响  

Effects of Annealing Time on Properties of ZnO:Al Thin Films Formed by Sol-gel Technique

作　　者：袁兆林[1] 祖小涛[1] 薛书文[1] 李绪平[1] 向霞[1] 王毕艺[1] 田东彬[1] 邓宏[2] 毛飞燕[2] 

机构地区：[1]电子科技大学物理电子学院,四川成都610054 [2]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《半导体光电》2008年第4期548-552,共5页Semiconductor Optoelectronics

基　　金：高等学校博士点科研基金资助课题(20050614013);教育部新世纪优秀人才支持计划资助课题(NCET-04-0899)

摘　　要：采用溶胶-凝胶法在石英玻璃衬底上制备了Al／Zn原子比为0．1％的ZnO：Al薄膜，在500℃的氩气中进行了1～5h不同时间退火处理，利用X射线衍射（XRD）、光致发光（PL）、透射光谱和四探针法研究了退火时间对薄膜性能的影响。结果显示，退火1h时，样品出现了C轴择优取向，深能级发射（DLE）提高，可见光区光学透过率约为80％，电阻率仅为4×10^-2Ω·cm。更长时间退火后，随着退火时间增加，薄膜结晶质量逐渐变差，电阻率逐渐增大。ZnO ： Al thin films doped with 0.1% aluminum（Al/Zn=0.1%） were deposited on quartz glass by the sol-gel technique. The as-prepared sample is annealed in argon ambient at 500 ℃ and annealing time is varied between 1 and 5 h. The effects of different annealing time on the properties of ZnO： Al thin films were investigated by X-ray diffraction（XRD）, photoluminescence （PL）, optical transmittance and four-probe method. Results show that when annealing time is 1 h, the sample exhibits preferred c-axis orientation, DLE is enhanced, the optical transmittances is about 80% in the visible region and the resistivity of the sample is only 4×10^-2 Ω· cm. When annealing time exceeds 1 h, the crystal quality becomes poor and the resistivity is increased continuously with increasing annealing time.

关 键 词：溶胶-凝胶法 ZNO:AL薄膜 光致发光 退火时间 透过率 

分 类 号：O484.4[理学—固体物理]