Growth Mechanism of Microcrystalline Silicon Films by Scaling Theory and Monte Carlo Simulation  

用标度理论和蒙特卡洛方法研究微晶硅薄膜的生长机制(英文)

作　　者：訾威[1] 周玉琴[1] 刘丰珍[1] 朱美芳[1] 

机构地区：[1]中国科学院研究生院物理科学学院,北京100049

出　　处：《Journal of Semiconductors》2008年第8期1465-1468,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2006AA05Z408);国家重点基础研究发展计划(批准号:2006CD202601,G2000028208);国家自然科学基金(批准号:10404038)资助项目~~

摘　　要：Hydrogenated microcrystalline silicon （~c-Si：H） films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition （HWCVD）. The growth-front roughening processes of the μc-Si..H films were investi- gated by atomic force microscopy. According to the scaling theory, the growth exponent β≈0.67, the roughness exponent α≈0.80,and the dynamic exponent 1/z = 0.40 are obtained. These scaling exponents cannot be explained well by the known growth models. An attempt at Monte Carlo simulation has been made to describe the growth process of μc-Si： H film using a particle reemission model where the incident flux distribution,the type and concentration of growth radical, and sticking,reemission,shadowing mechanisms all contributed to the growing morphology.使用热丝化学气相沉积技术制备微晶硅薄膜(沉积速度为1.2nm/s),通过原子力显微镜研究了薄膜前期生长的粗糙化过程.按照标度理论获得微晶硅薄膜的生长因子为β≈0.67,粗糙度因子为α≈0.80,动力学因子为1/z=0.40.这些标度指数不能用一般的生长模型来解释.通过蒙特卡罗模拟给出与实验一致的结果.模拟表明,入射流方向、生长基元的类型和浓度、生长基元的粘滞、再发射和影蔽过程都对微晶硅薄膜的表面形貌有比较重要的影响.

关 键 词：μc-Si：H growth mechanism scaling theory Monte Carlo simulations  reemission process 

分 类 号：O484.1[理学—固体物理] O242.2[理学—物理]