Gate Annealing of an Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT  

增强型InGaP/AlGaAs/InGaAs PHEMT栅退火工艺(英文)

作　　者：黎明[1] 张海英[1] 徐静波[1] 李潇[1] 刘亮[1] 付晓君[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第8期1487-1490,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60276021);国家重点基础研究发展规划(批准号:2002CB311901)资助项目~~

摘　　要：For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.针对InGaP/AlGaAs/InGaAs PHEMT器件,进行了Ti/Pt/Au和Pt/Ti/Pt/Au两种栅金属结构的退火实验,通过实验研究比较,得到了更适用于增强型器件的退火工艺,利用Ti/Pt/Au结构,在320℃退火40min,使器件阈值电压正向移动大约200mV,从而成功制作了高成品率的稳定一致的增强型器件,保证了增强型器件阈值电压在零以上.

关 键 词：ENHANCEMENT-MODE InGaP/A1GaAs/InGaAs PHEMT ANNEAL threshold voltage ring oscillator 

分 类 号：TG156.2[金属学及工艺—热处理]