A High-PSRR CMOS Bandgap Reference Without Resistor  

一种无电阻高电源抑制比的CMOS带隙基准源(英文)

作　　者：周前能[1] 王永生[1] 喻明艳[1] 叶以正[1] 李红娟[2] 

机构地区：[1]哈尔滨工业大学微电子中心,哈尔滨150001 [2]吉林化工学院信控学院,吉林132022

出　　处：《Journal of Semiconductors》2008年第8期1517-1522,共6页半导体学报（英文版）

摘　　要：A CMOS bandgap reference （BGR） without a resistor,with a high power supply rejection ratio and output be- low 1V is proposed. The circuit is suited for on-chip voltage down converters. The BGR is designed and fabricated using an HUTC 0.18μm CMOS process. The silicon area is only 0. 031mm^2 excluding pads and electrostatic-discharge （ESD） protec- tion circuits. Experimental results show that the PSRR of the proposed BGR at 100Hz and lkHz achieves, respectively, - 70 and 62dB using the pre-regulator. The proposed BGR circuit generates an output voltage of 0. 5582V with a varia- tion of 1.5mV in a temperature range from 0 to 85℃. The deviation of the output voltage is within 2mV when the power supply voltage VDD changes from 2.4 to 4V.提出一种输出低于1V的、无电阻高电源抑制比的CMOS带隙基准源（BGR）.该电路适用于片上电源转换器.用HJTC 0.18μm CMOS工艺设计并流片实现了该带隙基准源,芯片面积（不包括pad和静电保护电路）为0.031mm2.测试结果表明,采用前调制器结构,带隙基准源电路的输出在100Hz与1kHz处分别获得了-70与-62dB的高电源抑制比.电路输出一个0.5582V的稳定参考电压,当温度在0~85℃范围内变化时,输出电压的变化仅为1.5mV.电源电压VDD在2.4~4V范围内变化时,带隙基准输出电压的变化不超过2mV.

关 键 词：CMOS bandgap reference~ current source circuit~ PSRR~ pre-regulator 

分 类 号：TN432[电子电信—微电子学与固体电子学]