高压MOSFET直流特性宏模型的建立与参数优化  

A Macromodel and Parameter Optimization for the I-V Characteristics of High-Voltage MOSFETs

作　　者：许佳宜[1] 石艳玲[1] 任铮[2] 胡少坚[2] 万星拱[2] 丁艳芳[1] 赖宗声[1] 

机构地区：[1]华东师范大学信息学院电子系,上海200062 [2]上海集成电路研发中心,上海201203

出　　处：《Journal of Semiconductors》2008年第8期1561-1565,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60676047;60606010);上海市科委启明星计划(批准号:075007033;04QMX1419;07QB14018);上海-应用材料研究与发展基金(批准号:0522)资助项目~~

摘　　要：分析了SPICE BSIM3模型对高压双扩散漏MOSFET(HV double diffuse drain MOSFET)模拟过程中产生的较大偏差,有针对性地提出一种由nMOSFET,MESFET,二极管等常规SPICE器件组成的高压晶体管宏模型.该宏模型结构简单、使用方便,能准确描述HVMOS的I-V特性.为了提高该模型的尺寸可缩放性(scalability),将MESFET阈值电压对体电压的敏感因子K1进行优化,提取了不同沟道尺寸(W/L)下K1取值的半经验公式,使该宏模型能够适用于不同尺寸的晶体管,大大提高了它的实用价值.该尺寸可缩放宏模型(scalable macromodel)能应用于基于SPICE模型的各种通用EDA软件.This paper presents a macromodel applied to a high-voltage double diffused drain MOSFET （HV DDDMOSFET） after an- alyzing the distortion between measured curves and simulated curves obtained by the SPICE BSIM model. The macromodel is com- posed of regular SPICE devices,such as general nMOSFETs, MESFETs and diodes. The structure of the macromodel is simple. It is convenient to use,and it can describe the I-V characteristics correctly. In order to improve the scalability of the macromodel, the MESFET＇s parameter K1 （threshold voltage sensitivity to bulk node） has been optimized. A quasi-empirical expression between K1 and W/L of MOSFET has been obtained,which allows the macromodel to fit devices in different dimensions. The practicality of the model has been improved greatly. This scalable macromodel can be widely used in general EDA tools based on the SPICE model.

关 键 词：高压双扩散漏MOS晶体管 MESFET 尺寸可缩放宏模型 SPICE模型 

分 类 号：TN386.1[电子电信—物理电子学]