掺铌纳米ITO粉末制备及其ITO膜光电性能研究  

The Preparation of the Niobimn-doped Nanocrystalline ITO Powders and The Photoelectric Properties Research of Niobium - doped ITO Film

作　　者：刘浩[1] 张维佳[1] 丁照崇[1] 贾士亮[1] 郭卫[1] 吴倞[1] 

机构地区：[1]北京航空航天大学理学院凝聚态物理与材料物理研究中心,北京100083

出　　处：《中国材料科技与设备》2008年第5期26-30,共5页Chinese Materials Science Technology & Equipment

基　　金：国家863计划项目（2008AA05Z424）

摘　　要：采用均相共沉淀法制备出掺铌纳米ITO粉末，粉末经模压、高温烧结成高密度ITO靶（相对密度达99％以上），用直流磁控溅射法制备掺铌铟锡氧化物薄膜（Indium Tin Oxides简称ITO膜）。通过样品电阻实时监测装置，研究分析了溅射成膜时电阻变化规律及真空环境等对样品光电性能的影响。采用四探针测试仪、紫外-可见分光光度计、X射线衍射（XRD）及电子能谱仪（EDX）对样品进行了测试分析，结果表明：掺铌ITO膜的电阻率最小可达到2．583×10^-4 Ω·cm，可见光范围（400—800nm）平均透过率最高可达到93％。The niobium-doped nanocrystalline ITO powders was prepared by homogeneous coprecipitation method. The high density target was prepared by model pressing and high temperature sintering methods （the relative density reached 990/40）. With a set of In situ monitoring on the samples＇ resistance, the law of the samples＇ resistance changing during preparation and the influence of vacuum environment on the photoelectric properties of samples were studied and analyzed. Through the measurement and analyses on the samples by four point probe method, Visible-UV spectrophotometer, X-ray Diffraction and EDX on the samples, a conclusion was as follows： The niobium-doped ITO film＇s lowest resistivity could reach 2. 583 ×10^-4 Ω·cm, the highest average transparence rate could reach 93% in the wavelength range of 400-800nm.

关 键 词：ITO膜 掺杂Nb 光电性能 实时监测 

分 类 号：O484.4[理学—固体物理]