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作 者:陶彪[1]
机构地区:[1]黄石理工学院电气与电子信息工程学院,湖北黄石435003
出 处:《黄石理工学院学报》2008年第4期19-22,共4页Journal of Huangshi Institute of Technology
摘 要:根据InGaAsP/InPAPD在红外通信波段实现单光子探测的要求和特点,通过数学建模和仿真分析了门控抑制电路的各项参数之间的关系,为门模参数的实际选择提供依据。结果表明:偏置电压的大小、门脉冲宽度和周期的选择对提高探测器性能起着关键的作用。并在仿真的基础上提出了一个较为完善的单光子探测器电路,该电路能够为每个探测到的光子产生TTL信号。According to the requirements and the characteristics of the InGaAsP/InP avalanche photodiode for single photon detection at infrared wavelengths, the relation between the various gate - mode parameters had been analyzed by the mathematics model and simulation, which provided a reference for the selection of the gate - mode parameters. The result proved that the choice of the bias voltage, the width and the period of the gated pulse was very important to improve the performance of the detector. Based on the simulation, a relatively complete single - photon detector circuit was presented, which can produce the TTL signal for each detected photon.
关 键 词:单光子探测器 门模技术 雪崩光电二极管 量子密钥分发
分 类 号:TN911[电子电信—通信与信息系统]
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