亚微米级BJT的共基极、共发射极特性分析  

An Analysis of Common Base Characters and Common Emitter Characters of Sub-micron BJT

作　　者：李青龙[1] 

机构地区：[1]常州工学院电子信息与电气工程学院,江苏常州213002

出　　处：《常州工学院学报》2008年第4期45-48,共4页Journal of Changzhou Institute of Technology

摘　　要：文章借助Matlab工具对超大规模集成电路(VLSIC)中小尺寸双极型晶体管(BJT)的共基极接法、共发射极接法的输入、输出特性进行了数值分析与计算。通过模拟与分析得出:在VLSIC中,BJT在共基极接法和共发射极接法中,共基极接法的输入特性和共发射极接法的输出特性在理想模型近似与实际模型近似的分析结果偏差很大,但共基极接法的输出特性和共发射极接法的输入特性在理想模型近似与实际模型近似的分析结果基本一致。This paper simulates the common base input characters, the common base output characters, the common emitter input characters, and the common emitter output characters of submicron pnpBJT in VLSIC with Matlab, concluding that it does not go all the way of common base input characters between the ideal pnpBJT and the real pnpBJT. The common base output characters and the common emitter input characters are the same between the ideal pnpBJT, and the real pnpBJT. The simulated model and conclusion have important effects on VLSIC designing, device simulating and analyzing.

关 键 词：BJT 共基极 共发射极 Ebers—Moll MODEL 

分 类 号：TN32[电子电信—物理电子学]