ITO/HgInTe肖特基的光电特性  

Photoelectron characteristics of ITO/HgInTe Schottky contact

作　　者：张小雷[1] 孙维国[1] 鲁正雄[2] 张亮[2] 赵岚[2] 孟超[2] 丁嘉欣[2] 

机构地区：[1]西北工业大学材料学院,陕西西安710072 [2]中国空空导弹研究院,河南洛阳471009

出　　处：《红外与激光工程》2008年第4期594-597,共4页Infrared and Laser Engineering

基　　金：国际科技合作计划项目(2004DFB03400)

摘　　要：碲铟汞Hg3In2Te6是(In2Te3)x-(Hg3Te3)1-x(x=0.5)的化合物,被称为缺陷相化合物。在表面运用透明电极可以得到很高的量子效率。为了克服形成肖特基后漏电流过大的影响,运用等离子增强化学气相沉积在碲铟汞表面形成氧化层。运用直流平面磁控溅射技术和热电子蒸发技术分别在单晶HgInTe表面形成了ITO(SnO2+In2O3)/HgInTe和In/HgInTe接触,利用I-V测试仪对其I-V特性进行测量,运用能带结构和异质结理论对测量的I-V结果进行了描述,测量结果符合热电子发射理论。结果表明:ITO/HgInTe形成具有整流特性的肖特基接触,通过计算得到了ITO/HgInTe的肖特基势垒高度为0.506eV,理想因子n为3.2,串联电阻Rs为2600Ω;In/HgInTe形成欧姆接触。并且发现了在波长1.55μm处有很好的响应光谱,同时室温下峰值探测率D*λ达到了1011cm·Hz1/2·W-1。Mercury-indium telluride （MIT） Hg3In2Te6 corresponds to the composition x=0.5 of system （In2Te3）x-（Hg3Te3）1-x and belongs to the ＂defect phases＂. High external quantum efficiency （EQE） can be achieved by using transparent conducting electrode （TCE） as the surface electrode.In order to overcome the effect of large leakage current after forming Schottky,oxide film was grown on the MIT surface by plasma enhance chemical vapor deposition （PECVD）. ITO/HgInTe and In/HgInTe contact were fabricated using sputter deposition and heated electron evaporation methods,respectively. The current-voltage characteristic was described quantitatively based on the energy band structure and the heterojunction parameters.The experimental results fitted with thermionic emission theory. The results show that ITO/HgInTe contact is the Schottky contact with barrier height of 0.506 eV. The value of really factor and the series resistance are 3.2 and 2 600 Ω respectively. The In/HgInTe contact is the ohmic contact. A sharp cutoff is observed over 1.55 μm wavelength from the spectral response. And the value of the normalized detectivity D^＊λ is 10^11 cm·Hz^1/2·W^-1 at room temperature.

关 键 词：HgInTe ITO 肖特基接触 欧姆接触 响应光谱 

分 类 号：TN303[电子电信—物理电子学] TN304.26