退火对电容型硅纳米孔柱阵列湿度传感器性能的影响  

Impact of Anneal on Capacitive Humidity Sensitive Properties of Silicon Nanoporous Pillar Array

作　　者：吉慧芳[1,2] 董永芬[1] 李隆玉[1] 姜卫粉[1] 吕运朋[2] 李新建[1,2] 

机构地区：[1]郑州大学物理系,材料物理教育部重点实验室,郑州450052 [2]郑州大学测控技术系,郑州450003

出　　处：《传感技术学报》2008年第7期1097-1101,共5页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(10574112)

摘　　要：基于硅纳米孔柱阵列(Si-NPA)制备电容型湿度传感元件,并在250℃、450℃和550℃三个温度下对元件进行退火处理。测试数据显示,在测试温度低于550℃时,Si-NPA湿敏元件灵敏度随退火温度的升高而增大,但响应时间略微延长,湿滞回差略微增大;550℃退火后,元件的灵敏度急剧降低。采用场发射扫描电镜(FE-SEM)对不同温度退火的硅纳米孔柱阵列表面形貌进行观察,发现550℃退火元件的微观多孔结构发生了明显变化,即多孔结构致密化。结果表明,通过合适温度退火可以显著提高Si-NPA湿敏元件灵敏度,同时仍然保持较快的响应速度和较小的湿滞回差。The capacitive humidity sensors were fabricated based on silicon nanoporous pillar arrays （Si- NPA ）and annealed at 250℃,450℃ , 550℃ respectively. The tested results showed that the sensitivity in- creased gradually with elevating of annealed temperature before 550℃, while the response time decreased and the rapid moisture sensitive response increased appreciably. But as annealed at 550℃, the sensitivity decreased sharply. Through the surface microstructure observation by the filed-emission scanning electron microscope （FE-SEM）, it was found that the porous surface structure of the Si-NPA annealed at 550℃ had an obvious variety, namely the porous structure became more dense. Generally, the results showed that, by suitable temperature annealing, the sensitivity could be significantly improved, meanwhile the response speed still be quickly and the rapid moisture sensitive response be small.

关 键 词：硅纳米孔柱阵列(Si-NPA) 湿敏 退火 温度 

分 类 号：TP-212[自动化与计算机技术] TN303[电子电信—物理电子学]