单壁碳纳米管场发射尖端电势模拟计算  

Calculating and simulation for field emission tip electric potential of single-walled carbon nanotubes

作　　者：郭连权[1] 韩东[1] 马贺[1] 刘嘉慧[1] 宋开颜[1] 武鹤楠[1] 王帅[1] 

机构地区：[1]沈阳工业大学理学院,沈阳110178

出　　处：《沈阳工业大学学报》2008年第4期429-432,共4页Journal of Shenyang University of Technology

基　　金：沈阳工业大学博士基金资助项目(521101302)

摘　　要：以Maxwell电磁场理论为基础,对金属型单壁碳纳米管场发射阴极尖端附近的电势进行了模拟计算,发现在碳纳米管尖端附近,随着径向距离和轴向距离的增加,电势迅速增加;而离碳纳米管尖端较远的区域,随着径向距离和轴向距离的增加,电势增加缓慢直至为常数(即无碳纳米管时的背景场电势).说明了碳纳米管产生的激发场为极强的小范围的局域场.该结果为单壁碳纳米管做场发射材料提供了有益的理论参考.The electric potential near the tip of metallic single-walled carbon nanotubes （SWNTs） as the field emission cathode was calculated and simulated based on Maxwell electromagnetic theory. It is proved that near the tip of SWNTs, the electric potential increases sharply with the radial and axial distances, while within the area relatively far from the tip, the electric potential increases very slowly and even keeps constant with an increase in the radial and axial distances. It implies that the stimulated electric field generated by SWNTs is a strong field with limited area. The present results can provide a theoretical reference for SWNTs to be used as ideal field emission material.

关 键 词：单壁碳纳米管 场发射 电势 模拟 计算 

分 类 号：O73[理学—晶体学] O799