晶界层介电陶瓷及其单层电容器  

Grain boundary dielectric ceramics and the single layer chip capacitors

作　　者：杨俊锋 冯毅龙 赵海飞 程超 

机构地区：[1]广州翔宇微电子有限公司,广东广州510288

出　　处：《材料研究与应用》2008年第3期207-210,共4页Materials Research and Application

基　　金：科技部科技型中小企业创新基金(06C26214401624)

摘　　要：研究了施主掺杂还原气氛烧结的SrTiO3基半导体瓷的组成与性能的关系.通过等效电路分析,XRD,SEM显微结构观察,探讨了晶界效应及其特性对瓷料性能作用的机理,制成了介电系数可调(10000~50000),电容量变化率低(±4.7%~±22%),使用温域宽(-55^+125℃)的单层片式晶界层电容器.The relationship between the composition and properties of donor doping SrTiO3 semiconductor ceramic that sintered in the reducing atmosphere was studied. By means of equivalent circuit analysis and XRD, SEM observation, the influence of grain boundary effect and characteristics on ceramic performance was investigated. Obtained grain boundary single layer chip capacitors exhibited high performance： adjustable dielectric constant （10000 ～ 50000）, low capacitance temperature change （ ± 4. 7～± 22%） and broad working temperature range （-55 ～ ＋ 125 ℃ ）.

关 键 词：SRTIO3 晶界层 单层电容器 

分 类 号：TN304[电子电信—物理电子学]