光学薄膜制备用的多离子束电子束系统  

MULTI ION AND ELECTRON BEAM SYSTEM FOR PREPARING OPTIC THIN FILMS

作　　者：冯毓材[1] 李哓谦[1] 尢大纬 况元珠 王宇[1] 

机构地区：[1]中国科学院空间科学与应用研究中心

出　　处：《电工电能新技术》1997年第3期26-29,共4页Advanced Technology of Electrical Engineering and Energy

摘　　要：本文介绍一种新型的光学薄膜制备用多离子束电子束系统。该系统既可采用聚焦离子束溅射沉积，也可采用传统的电子束蒸发沉积薄膜，并辅助以低能离子轰击，离子可以是惰性元素也可以是反应气体离子。系统的特征是：任何与真空相容的材料均可用作靶材，制备薄膜。系统采用一台１０ｃｍ直径宽束离子源作为辅助沉积；二台特殊设计的聚焦离子源用于溅射沉积。为了能对绝缘样品或在沉积绝缘薄膜时对离子束进行有效而无污染的中和，系统还配置了一台新型的宽束电子源。文中对装置的特点，各个离子源、电子源的性能及特性进行了较详细的描述。利用该系统已制备了如ＴｉＯｘ、ＺｒＯｘ和多层ＺｒＯ２／ＳｉＯ２等特殊的光学薄膜。This paper describes a new multi ion and electron beam system for preparing optic thin films. It can be used for preparing thin films by sputter coating, and also for general vapor deposition with ion beam assisted. The ions can be inert or reactive gaseous element. The feature of this system is that any element which is compatible with vacuum environment can be used as target material for preparing thin film by sputter coating or electron beam vapor deposition. In this system, A 10cm diameter ion source is used for assisted deposition. Two special designed focusing ion sources are used for sputter coating, and a new type low energy broad beam electron source which has no contamination to film during deposition is used for ion beam neutralization when insulator sample or target is used. The feature of this system, and the performace and characteristics of these ion and electron sources are presented in the paper. By using this system, good results for preparing special optic thin films such as TiO x, ZrO x and multilayer ZrO 2/SiO 2 etc. have been obtained.

关 键 词：光学薄膜 多离子束电子束 薄膜 

分 类 号：O484[理学—固体物理] O463[理学—物理]