Band Edge Model of (101)-Biaxial Strained Si  

(101)面生长双轴应变Si带边模型(英文)

作　　者：宋建军[1] 张鹤鸣[1] 戴显英[1] 胡辉勇[1] 宣荣喜[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2008年第9期1670-1673,共4页半导体学报（英文版）

基　　金：the National Ministries and Commissions of China(Nos.51308040203,9140A08060407DZ0103)~~

摘　　要：A band edge model in （101）-biaxial strained Si on relaxed Si1-x Gex alloy,or monoclinic Si （m-Si）,is presented using the k · p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100], [100] valleys constitute the conduction band （CB） edge,which moves up in electron energy as the Ge fraction （x） increases. Furthermore,the CB splitting energy is in direct proportion to x and all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices.采用结合形变势理论的k.p微扰法建立了(101)面弛豫Si1-xGex衬底上生长的双轴应变Si的带边模型.结果表明:[001],[00],[100]及[00]方向能谷构成了该应变Si的导带带边,其能量值随Ge组分的增加而增加;导带劈裂能与Ge组分成正比例线性关系;价带三个带边能级都随Ge组分的增加而增加,而且Ge组分越高价带带边劈裂能值越大;禁带宽度随着Ge组分的增加而变小.该模型可获得量化的数据,为器件研究设计提供有价值的参考.

关 键 词：strained Si band edge k · p method 

分 类 号：TN301.1[电子电信—物理电子学]