Characterization of Phosphorus Diffused ZnO Bulk Single Crystals  

磷扩散氧化锌单晶的性质(英文)

作　　者：张瑞[1] 张璠[1] 赵有文[1] 董志远[1] 杨俊[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2008年第9期1674-1678,共5页半导体学报（英文版）

基　　金：the National Natural Science Foundation of China(No.60736032)~~

摘　　要：Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.分别在550和800℃对CVT方法生长的非掺ZnO单晶进行闭管磷扩散.通过Hall测试、X射线光电子谱（XPS）、光致发光（PL）以及喇曼散射对扩散后的样品进行测试分析.发现扩散掺杂后的ZnO单晶仍显示n型导电性,自由电子浓度比非掺样品增高,在800℃扩散后尤为明显.PL测试结果表明,掺杂样品在420-550nm范围的可见光发射与缺陷有关.XPS测试表明：在550℃掺杂,P原子更易代替Zn位;在800℃扩散时,P未占据Zn位,而似乎占据了O位.最终在磷扩散后的ZnO单晶中形成了高浓度的浅施主缺陷,造成了自由电子的显著增加.

关 键 词：DIFFUSION DEFECT ZNO PHOSPHORUS 

分 类 号：TN301.1[电子电信—物理电子学]