An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate  

增强型AlGaN/GaN槽栅HEMT(英文)

作　　者：王冲[1] 张金凤[1] 全思[1] 郝跃[1] 张进城[1] 马晓华[1] 

机构地区：[1]西安电子科技大学微电子研究所宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《Journal of Semiconductors》2008年第9期1682-1685,共4页半导体学报（英文版）

基　　金：the Key Programof the National Natural Science Foundation of China(No.60736033)~~

摘　　要：Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V, a maximum transconductance of 221mS/mm, a threshold voltage of 0.57V, ft of 5.2GHz, and fmax of 9.3GHz. A dielectric layer formed unintentionally during recessedgate etching is confirmed by contrasting the Schottky I-V characteristics of pre-etching and post-etching. The frequency characteristics and subthreshold characteristics of the devices are studied in detail.成功研制出蓝宝石衬底的槽栅增强型AlGaN/GaN HEMT.栅长1.2μm,源漏间距4μm,槽深15nm的器件在3V栅压下饱和电流达到332mA/mm,最大跨导为221mS/mm,阈值电压为0.57V,ft和fmax分别为5.2和9.3GHz.比较刻蚀前后的肖特基I-V特性,证实了槽栅刻蚀过程中非有意淀积介质层的存在.深入研究了增强型器件亚阈特性和频率特性.

关 键 词：high electron mobility transistors AlGaN/GaN recessed-gate threshold voltage 

分 类 号：TN386[电子电信—物理电子学]