φ200mm太阳能电池用直拉硅单晶生长中导流系统的研究  

A Guide System in φ200mm CZ-Si Growth

作　　者：任丙彦[1] 褚世君[1] 吴鑫[1] 于建秀[1] 孙秀菊[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《Journal of Semiconductors》2008年第9期1790-1793,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60576002)~~

摘　　要：利用数值模拟,对CZ硅单晶生长系统中导流系统调整和改进,得到不同导流系统下的氩气流场和全局温场.研究发现在导流系统中引入导流筒及冷却功能后,氩气流场得到明显的改善,晶体中纵向温度梯度均匀性改善,固液界面趋于平坦,有利于结晶潜热的散发和单晶径向电阻率的均匀性.研究表明改进导流系统能提高结晶潜热散发速率,有利于提高晶体拉速.By modifying the guide system, with the help of the numerical simulation, the argon flow field and the total thermal field are obtained. We find that using the guide shell and the cooling cover improves the argon flow field, the solid-liquid interface, and the temperature gradient. It is good for the emanatory of crystallization latent heat and the improvement of the radical resistivity in the crystal. It also clarifies the mechanism of the improvement of the temperature gradient and the crystallization latent heat emanation velocity by improving the guide system.

关 键 词：数值模拟 直拉硅单晶 结晶潜热 导流筒 

分 类 号：TM914.4[电气工程—电力电子与电力传动]