一种改进了碰撞电离的超高速InP基SHBT SDD模型  

A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization

作　　者：葛霁[1] 金智[1] 刘新宇[1] 程伟[1] 王显泰[1] 陈高鹏[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第9期1799-1803,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2002CB311902)~~

摘　　要：从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型.同时针对自有工艺和器件特性,采用SDD(symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型.模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性.This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SH- BTs. Considering the effect of temperature, an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field. A new SDD model including impact ionization and self-heating effects is developed for ultra highspeed InP-based SHBTs. The simulation result is consistent with the experimental data,indicating the accurate predictions of the model.

关 键 词：碰撞电离 温度依赖 超高速InP基SHBT SDD模型 

分 类 号：TN401[电子电信—微电子学与固体电子学]