低驱动电压k波段电容耦合式RF MEMS开关的设计  

Design of low threshold voltage k-band capacitive RF MEMS switch

作　　者：刘佳[1,2] 高杨[2] 白竹川[1] 李仁锋[2] 

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《传感器与微系统》2008年第9期75-77,81,共4页Transducer and Microsystem Technologies

基　　金：武器装备预研计划资助项目

摘　　要：设计了一种低驱动电压的电容耦合式射频微机械(RF MEMS)开关。RF MEMS开关采用共面波导传输线,双电极驱动,悬空金属膜采用弹性折叠梁支撑。使用MEMS CAD软件CoventorWare、微波CAD软件HFSS,分别仿真了开关的力学性能和电磁性能,仿真结果表明:开关的驱动电压为2.5 V,满足低驱动电压的设计目标;开关开态的插入损耗约为0.23 dB@20 GHz,关态的隔离度约为18.1 dB@20 GHz。最后给出了这种RF MEMS开关的微制造工艺。A low threshold voltage capacitive RF MEMS switch is designed. The switch consists of double drive electrodes and suspended metallic membrane supported by flexible serpentine springs over a coplanar waveguide. MEMS CAD software CoventorWare and microwave CAD software HFSS are used to simulate mechanical and electromagnetic characteristics of the RF MEMS switch respectively. Simulation result demonstrates that threshold voltage of the switch is 2.5 V, which achieves goal of the design. The insertion loss of up state is about 0.23 dB@ 20 GHz,and the isolation of down state is about 18. 1 dB@ 20 GHz. Micromachining process of the RF MEMS switch is also outlined.

关 键 词：射频开关 低驱动电压 仿真 

分 类 号：TM564[电气工程—电器]