^(60)Co γ射线辐照对肖特基二极管1/f噪声的影响  

The effect of ^(60)Co γ ray irradiation on the 1/f noise of Schottky barrier diodes

作　　者：杨丽侠[1] 杜磊[1] 包军林[2] 庄奕琪[2] 陈晓东[1] 李群伟[1] 张莹[1] 赵志刚[1] 何亮[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071 [2]西安电子科技大学微电子学院,西安710071

出　　处：《物理学报》2008年第9期5869-5874,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60676053);西安应用材料创新基金(批准号:XA-AM-200603)资助的课题~~

摘　　要：在肖特基二极管(Schottky barrier diode,SBD)辐照损伤机理和总剂量效应分析的基础上,利用1/f噪声的迁移率涨落和载流子数涨落模型,深入研究辐照损伤对器件1/f噪声的影响.研究结果表明,辐照诱生新的界面态,改变界面态密度分布,进而调制了肖特基势垒高度,增大表面复合速度是引起器件性能退化主要原因,也是1/f噪声剧烈增加的主要原因.正因为如此,噪声与器件退化存在相关性,即噪声拟合参数B越大,偏离标准值越多,器件可靠性越差,抗辐照能力越低,在辐照环境下工作越容易失效.由此可知,1/f噪声特性可以用作SBD辐照损伤机理的研究工具,并有可能用于SBD抗辐射加固的无损评估.Based on the analysis of the mechanism of irradiation damage and total dose effect on Schottky barrier diodes （ SBD）, using the model of the carrier mobility fluctuation and carrier number fluctuation of 1/f noise, the effect of irradiation damage on 1/f noise of SBD was studied in this paper. The research shows that, the irradiation induced interface states change the distributing of interface state density, and, moreover, modulate the Schottky barrier height and increase the velocity of recombination in the surface, leading to the degradation of device performance as well as the significant increasing of 1/f noise level. So, 1/f noise is closely related to SBD＇s degradation, namely, the larger the magnitude of 1/f noise and the deviation from standard value, the worse the reliability of device, and it＇s also an indicator of bad radiation-proof performance, which causes its high failure rate in radiation environment. Thus the 1/f noise acts as a researching tool on the mechanism of irradiation damage of SBD, also provides the theoretical basis for nondestructive irradiation hardness assessment.

关 键 词：肖特基二极管 1/f噪声 ^60CO Γ射线 界面态 

分 类 号：TN312[电子电信—物理电子学]