ITO/有机半导体/金属结构OLED器件的数值模拟  

Numerical model of ITO /organic semiconductor/metal organic light emitting device

作　　者：胡玥[1] 饶海波[1] 李君飞[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《物理学报》2008年第9期5928-5932,共5页Acta Physica Sinica

基　　金：浙江阳光集团合作项目“OLED器件研究”,编号W050317的支持.

摘　　要：基于稳态的小信号漂移扩散方程,建立了有电极的单层有机电致发光(OLED)器件的数值模型,编制的MATLAB程序,首先模拟了文献中的OLED器件电极附近正电荷层(面电荷)对器件J-V的影响,得到了和文献中一致的结果.模拟了ITO/PPV/Ca结构的OLED器件,模拟时,考虑了OLED阳极附近存在正体电荷,得到的J-V曲线和文献中的实验结果一致,体电荷产生了势垒,影响了电流曲线.A numerical model of organic light emitting device （OLED） with metal/organic/metal structure was discussed on the basis of drift-diffusion equations in this paper. First, the influence of charges localized near the electrodes to the J- V curve was calculated tmd we got the same result of the literature. Second, the J- V curve of OLED with structure of ITO/PPV/Ca was simulated. In the simulation, the case of positive charge distribution localized near the anode was considered. The calculated J-V curve was in good agreement with the experiment. The charge creates an additional barrier and has a noted influence on the current density.

关 键 词：有机电致发光 数值模拟 漂移扩散模型 

分 类 号：O471[理学—半导体物理]