半金属Fe_3O_4薄膜的磁控溅射制备及磁电学性能研究  

Magnetic Properties of Half-Metallic Fe_3O_4 Thin Films Deposited from Fe_2O_3 Target in Hydrogen Atmosphere

作　　者：闫红[1] 米仪琳[1] 张铭[1] 严辉[1] 

机构地区：[1]北京工业大学薄膜材料实验室,北京100022

出　　处：《北方工业大学学报》2008年第3期61-66,共6页Journal of North China University of Technology

基　　金：国家自然科学基金资助项目(No60576012);;北方工业大学校科研基金资助项目

摘　　要：利用交流磁控溅射法，在H2中采用Fe3O4靶材，成功制备了（111）取向的Fe3O4薄膜．对薄膜样品进行XRD测试，研究不同衬底温度对成相的影响．对薄膜表面的XPS测试结果表明所制备薄膜为单相Fe3O4，沉积过程中随H2量增大，薄膜表面粗糙度有显著增加．对薄膜进行磁学性能的测试，饱和磁化强度高达50000e，反映了反相晶粒边界（APBs）的存在，Tv以下较低的晶格对称度导致了矫顽场的增大，薄膜的电阻随温度变化曲线（R—n显示115K附近出现Verwey相变，对R—T曲线的拟和结果显示，Fe3O4；薄膜在40～300K温度区间为电子的变程跳跃VRH（Variable range hopping）导电机制。By rf-sputtering, in the hydrogen atmosphere, taking Fe3O4 as the target, （111）- oriented Fe3O4 thin film is successfully prepared. The crystal structure of the films deposited at different temperatures is detected by the X-ray Diffraction （XRD） and the XPS analysis show that the prepared Fe3O4 is single-phased. The surface roughness increases with the increase of the partial pressure of hydrogen. Putting the thin film under magnetic properties text, the saturation magnetization which implies the existence of the antiphase boundary （APBS）. The higher coercive field below Tv is ascribed to the lower symmetry of the crystal structure. The temperature vs resistance graph shows a very clear Verwey transition at 115K and fits the Variable Range Hopping （VRH） model at the temperature range between 40K and 300K.

关 键 词：FE3O4 VRH Verwey相变 半金属 

分 类 号：TB43[一般工业技术]