supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61474091);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206);the New Experiment Development Funds for Xidian University,China(Grant No.SY1213);the 111 Project,China(Grant No.B12026);the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry,China;the Fundamental Research Funds for the Central Universities,China(Grant No.K5051325002)
The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this p...