GaN基垂直腔面发射激光器的研制  

Fabrication of GaN-based Vertical Cavity Surface Emitting Lasers

作　　者：张保平[1] 蔡丽娥[1] 张江勇[2] 李水清 尚景智[1] 王笃祥 林峰 林科闯 余金中[2] 王启明[2] 

机构地区：[1]厦门大学物理与机电工程学院,福建厦门361005 [2]中国科学院半导体研究所集成光电子学国家重点联合实验室,北京100083 [3]厦门三安电子有限公司技术中心,福建厦门361009

出　　处：《厦门大学学报（自然科学版）》2008年第5期617-619,共3页Journal of Xiamen University：Natural Science

基　　金：科技部国家高科技研究发展计划(863计划)资助

摘　　要：作者在我国大陆首次实现了GaN基垂直腔面发射激光器(VCSEL)的激射.首先采用金属有机物化学气相沉积(MOCVD)技术在蓝宝石衬底上进行高质量氮化物增益区的外延生长,然后在表面沉积高反射介质膜分布布拉格反射镜(DBR).将样品键合到其它支撑片上后,采用激光剥离技术将蓝宝石衬底去除.再在去除蓝宝石后露出的氮化物表面沉积第二组介质膜DBR制成VCSEL.在室温光泵条件下,观察到VCSEL的激射,激射波长449.5 nm,阈值6.5 mJ/cm2,激射峰的半高宽小于0.1 nm,这些指标达到了国际领先水平.本文为进一步研制实用化氮化物VCSEL奠定了重要的基础.OaN-based vertical surface emitting lasers （VCSELs） have potential applications in various fields such as high-density optical storage. This paper is the first report in mainland of Chins on lasing action of GaN-based VCSEL. High-quality nitride active gain region was grown on an Al2O3 sapphire substrate using metalorganic chemical vapor deposition （MOCVD）. Then a high-reflectivity dielectric distributed Bragg reflector （DBR） was deposited on the surface. After bonding a supporting plate on the surface, the sapphire substrate was removed by a laser-lift-off method and the second dielectric DBR was deposited on the exposed GaN surface to form a VCSEL structure. Lasing action was confirmed under optical pumping at room temperature. The lasing wavelength,threshold and linewidth were 449.5 nm, 6.5 mJ/cm^2 and 0.1 nm, respectively. The threshold and linewidth are better than those ever reported. The result of this work laid important foundation of current-injected VCSEL based on nitride semiconductors.

关 键 词：宽禁带半导体 氮化镓 氮化物 半导体激光器 垂直腔面发射激光器 

分 类 号：TN248[电子电信—物理电子学]