球心处有附加电极的半圆形容器等离子体源离子注入过程中鞘层的时空演化  

Ion Dynamics in Pulsed Plasma Sheath of Plasma Source Ion Implantation of a Hemispherical Bowl-Shaped Vessel Object with a Concentric Auxiliary Electrode

作　　者：刘成森[1] 李晓红[1] 王德真[2] 刘天伟[3] 

机构地区：[1]辽宁师范大学物理与电子技术学院 [2]大连理工大学物理与光电工程学院,三束材料改性国家重点实验室 [3]中国工程物理研究院表面物理与化学国家重点实验室

出　　处：《真空科学与技术学报》2008年第5期415-419,共5页Chinese Journal of Vacuum Science and Technology

基　　金：表面物理与化学国家重点实验室基金(No.90000460200606)资助的课题

摘　　要：本文利用两维流体模型研究了半圆形容器在放置共心零电位附加电极情况下,等离子体源离子注入的离子鞘层时空演化动力学过程。考察了鞘层内随时间变化的电势分布和离子密度分布,计算了容器内外表面的离子束流密度分布和注入剂量分布随时间的变化规律。研究结果显示,容器内表面附近鞘层扩展到附加电极后,其中的离子逐渐都注入到容器内表面、电场分布逐渐趋于稳定。同时,在容器内表面上,离子注入剂量不再增加。The ion sheath dynamics in plasma source ion implantation （PSII） was simulated by using the 2-dirnensional fluid model and with the experimental setup of a hemispherical cup plus a grounded concentric auxiliary electrode. The time evolutions of the potential distributions and the ion density distribution in the sheath were evaluated. Moreover, the time dependences of both the ion flux densities on inside and outside walls of the cup and the ion implantation dose were calculated. The simulated results show that after the sheath expands from near the inside wall of the cup to the auxiliary electrode, the ions can be gradually implanted into the inner walls; and the potential distribution reaches a steady state. Moreover the implanted ion dose keeps unchanged.

关 键 词：半圆形容器 等离子体源离子注入 鞘层演化 

分 类 号：O53[理学—等离子体物理] TG174.444[理学—物理]