非晶硅薄膜上碘化汞多晶薄膜的生长及其性能  

Growth and Characterization of Polycrystalline HgI_2 Films on Amorphous-Si Film Substrate

作　　者：郑耀明[1] 史伟民[1] 魏光普[1] 秦娟[1] 徐环[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《真空科学与技术学报》2008年第5期441-444,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然基金资助项目(No.10775096);上海市科委资助项目(No.06ZR14035);上海市科委重点项目(No.03DZ12033);上海市重点学科资助(No.T0101)

摘　　要：采用改进后的带有真空活塞的热壁物理气相沉积装置在非晶硅薄膜上制备HgI2多晶薄膜,使薄膜生长的操作过程更加简单安全。用边抽真空边生长薄膜的方式,可以获得较大的生长速率。通过改变不同的沉积参数,对获得的薄膜,采用XRD、SEMI、-V特性以及电容频率特性等手段对其进行表征,结果表明,获得了沿〈001〉晶向柱状生长且晶粒大小均匀、电阻率为2.5×1011Ω.cm、相对介电常数为5.53的薄膜。The polycrystalline HgI2 films were grown by modified hot wall vapor deposition（HWPCD） on amorphous-Si film substrate. The microstructures of the as-deposited films were characterized with X-ray diffraction（XRD）, scanning electron microscopy（SEM） and conventional probes. The influence of the film growth conditions on microstructures and properties of the films was studied. The results show that the pressure strongly affects the deposition rate. After judicious choice of the deposition conditions, the fairly compact and smooth HgI2 films consist of uniform, 〈001〉oriented, columnar crystallince grains, with a resistivity of 2.5 ×10^11Ω·cm and a relative dielectric constant of 5.53.

关 键 词：多晶 碘化汞 非晶硅 物理气相沉积 

分 类 号：O782.7[理学—晶体学]