808nm大功率连续半导体激光器研究  

Study of 808 nm High Power Semiconductor Laser at Continuous Wave Operation

作　　者：杜伟华[1] 杨红伟[2] 陈宏泰[2] 李雅静[1] 王薇[1] 陈国鹰[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第8期444-447,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金项目(60676035);河北省自然科学基金资助项目(F2005000084)

摘　　要：利用金属有机化学气相淀积(MOCVD)技术,生长了AlGaInAs/AlGaAs分别限制压应变单量子阱材料,利用该材料制成3mm宽、填充因子20%的半导体激光器阵列(版型100μm/500μm,6个发光单元),通过腔面反射率设计确定了最佳反射率,采用CS载体标准封装。在输入电流8A、水冷19℃条件下测试,输出功率达到8.4W,阈值电流为1.8A,斜率效率为1.26W/A,功率转换效率为59.4%,波长为805.7nm,光谱半宽为1.8nm;输入电流12A时,输出功率达到13W,斜率效率为1.22W/A,功率转换效率为58.9%,波长为807.9nm,光谱半宽为2.0nm。AlGaInAs/AlGaAs separated confinement heterostructure compressively strained single quantum well materials were grown by metal organic chemical vapor deposition （MOCVD）. The peak output power of the semiconductor laser array （3 mm width, 20% fill factor, 100 μm/500 μm, 6 emitters） with the material is 8.4 W （drive current 8 A, 19℃）, threshold current is 1. 8 A, the slop efficiency is 1.26 W/A, the 59. 4% power conversion efficiency is reached, the peak wavelength is 805.7 nm, and the full width at half maximum is 1.8 nm. The peak output power is 13 W （drive current 12 A）, the slop efficiency is 1.22 W/A, the power conversion efficiency 58.9% is reached, the peak wavelength is 807.9 nm, and the full width at half maximum is 2.0 nm.

关 键 词：金属有机物化学气相淀积 压应变 半导体激光器 腔面反射率 斜率效率 

分 类 号：TN365[电子电信—物理电子学] TN304.055