Te掺杂ZnSe/[(CdSe)_l(ZnSe)_3]_m超晶格荧光光谱  

Photoluminiscence Spectra of Te Doped ZnSe/ [(CdSe) 1 (ZnSe) 3] m Superlattice

作　　者：胡湘威[1] 汪河洲[1] 郑锡光[1] 赵福利[1] 徐耕[1] 

机构地区：[1]中山大学超快速激光光谱学国家重点实验室/物理学系

出　　处：《中山大学学报（自然科学版）》1997年第5期35-39,共5页Acta Scientiarum Naturalium Universitatis Sunyatseni

基　　金：国家自然科学基金;广东省自然科学基金;中山大学前沿课题基金

摘　　要：对垒区Ｔｅ掺杂浓度不同的ＺｎＳｅ／［（ＣｄＳｅ）１（ＺｎＳｅ）３］ｍ短周期超晶格量子阱的稳态和瞬态荧光进行了实验研究，通过不同激发强度下逐级饱和过程测得ＺｎＳｅ垒区自由激子寿命为３５ｐｓ，［（ＣｄＳｅ）１（ＺｎＳｅ）３］７阱区自由激子寿命为１７７ｐｓ，束缚在不同ｎ值的Ｔｅｎ束缚激子的复合寿命为０．５～１０ｎｓ．揭示了Ｔｅ掺杂浓度对能量传递、荧光波长和荧光寿命的灵敏的影响及其规律．Excitation density dependent and time resolved photoluminescence of barrier Te doped ZnSe/[(CdSe) 1(ZnSe) 3] m short period superlattice multiple quantum wells with different Te concentration are studied at 77 K. The experimental results show that the lifetime of free exciton in ZnSe barrier region is 35 ps, the lifetime of the free exciton in quantum well region is 177 ps and the lifetimes of the bound excitons traped in(Te) n clusters with different n value vary from 0.5 to 10 ns. This work reveals that the spectra, the dynamics of excitonic photoluminescence and energy transfer depend sensitively on Te concentration.

关 键 词：激子 超晶格 荧光光谱 碲 掺杂 硒化锌 

分 类 号：O472.3[理学—半导体物理]