Ni_(65)Co_(35)薄膜各向异性磁电阻性能的研究  

Study on AMR Properties of Ni_(65)Co_(35) Thin Films

作　　者：许俊涛[1] 张寿柏[1] 杨春生[1] 

机构地区：[1]上海交通大学信息存储研究中心,上海200030

出　　处：《磁性材料及器件》1997年第4期26-30,共5页Journal of Magnetic Materials and Devices

摘　　要：选用Ni_(65)Co_(35)合金靶材，利用射频磁控溅射的方法成膜，采用四探针法测量磁电阻率，分别研究了溅射工艺参数（工作气压、偏压、功率、基片温度等）对薄膜磁电阻性能的影响，并对影响机理作了理论上的分析；另外还对Ni_(65)Co_(35)薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ni_(65)Co_(35)薄膜的磁电阻率有着较大的影响、适当的溅射参数能有效地提高磁电阻率；Ni_(65)Co_(35)薄膜退火处理后磁电阻率有明显上升，对应的激活能为1．15eV。Chosing Ni_(65)Co_(35) as target matema1s,thin films were prepared by RF magnetron system. Thr0ugh the measurement of MR ratio by four-point-probe method, MR properties as function of certain sputtering parameters, such as Ar pressure,bias voltage, sputtering power and substrate temperature were systematicaly studied and the mechanism was ana1yzed. We find that the MR ratio of the film depends greatly on sputtering parameters, and a significant increase in MR ratio can be achieved with a thermal activation energgy of 1. 15 eV.

关 键 词：各向异性 磁电阻 射频磁控溅射 Ni65Co35薄膜 

分 类 号：TM270.14[一般工业技术—材料科学与工程]