用催化CVD法研制优质a-Si薄膜  

Preparation of amorphous silicon films by catalytic CVD

作　　者：钟伯强[1] 黄慈祥 潘惠英[1] 

机构地区：[1]中科院上海硅酸盐所

出　　处：《半导体光电》1997年第6期414-417,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金

摘　　要：用新的催化ＣＶＤ法在约３５０℃的低温条件下研制出了ａ－Ｓｉ薄膜。本方法是利用催化剂，使ＳｉＨ４和Ｈ２混合气体在一定温度下反应而裂解，在衬底上沉积ａ－Ｓｉ薄膜。所制出的ａ－Ｓｉ薄膜具有良好的光电特性，光电灵敏度超过１０６，电子自旋密度约２．５×１０１６ｃｍ－３。: Amorphous silicon (a-Si) films are prepared at lower temperature (350 ℃) by new catalytic chemical vapor deposition (CVD) method.In the method gas mixture (SiH4 and H2)is decomposed by catalytic reaction at given temperature.As a result a-Si films are deposited on the substrates.It is found that a-Si films with good quality can be obtained with photosensitivity is excess of 106 and spin density as low as 2.5×1016 cm-3.

关 键 词：生长速率 a-硅薄膜 催化CVD法 

分 类 号：TN304.12[电子电信—物理电子学] TN304.055