钝化膜抗γ辐照的研究  

The Study of Passivated Thin Film Resist γ Radiation

作　　者：张济龙[1] 

机构地区：[1]西南农业大学基础科技学院物理系

出　　处：《半导体杂志》1997年第4期17-20,共4页

摘　　要：研究了几种不同的钝化膜的γ辐照特性，初步揭示出单纯的ＳｉＯ２膜不具备抗γ辐照的能力，厚度为１００ｎｍ涂有聚酰亚胺的ＳｉＯ２膜当辐照剂量小于１０６拉德（Ｓｉ）时具有良好的抗γ辐照作用。同时指出了四甲基氢氧化胺对ＳｉＳｉＯ２界面也有影响。The γ radiation specific property of some different passivated thin films is studied, the result indicates that simple SiO 2 film can't resist γ ray, and that SiO 2 film which thickness is 100nm with polyimide can resist γ ray when the radiation dosage is lower than 10 6 rad(Si). It is indicated that tetramechy ammonium hydroxide can affect Si SiO 2 interface also.

关 键 词：钝化膜 半导体器件 抗电子辐射 

分 类 号：TN304.05[电子电信—物理电子学] TN303