SiGe外延层中硼注入和退火  

B-implantation and annealing for SiGe epilayers

作　　者：江若琏[1] 刘卫平[1] 江宁[1] 胡立群[1] 朱顺明[1] 郑有[1] 

机构地区：[1]南京大学

出　　处：《半导体光电》1997年第5期343-345,共3页Semiconductor Optoelectronics

基　　金：国家863计划

摘　　要：对采用快速加热、超低压－化学汽相淀积（ＲＴＰ／ＶＬＰ－ＣＶＤ）技术生长的Ｓｉ０．８Ｇｅ０．２／Ｓｉ应变外延层进行硼注入，注入能量为４０ｋｅＶ，注入剂量为２．５×１０１４ｃｍ－２。然后，进行不同时间、不同温度的快热退火（ＲＴＡ）和稳态炉退火。结果表明，ＲＴＡ优于稳态炉退火，其最佳条件是：退火时间为１０ｓ，退火温度范围为７５０℃～８５０℃，或者退火温度为７００℃，时间为４０ｓ，基本可消除由注入引起的损伤，获得约３００ｃｍ２／Ｖ·ｓ的空穴迁移率以及近１００％的激活率。Si 0.8 Ge 0.2 strained epilayers were grown on Si substrates by rapid thermal process/very low pressure-chemical vaper deposition(RTP/VLP-CVD) and then implantated with Boron were at 40 keV for a dose of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA)and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.A implantation induced damage can be removed at annealing temperature of 750 ℃～850 ℃for 10 s or at 700 ℃for 40 s.A carrier mobility of about 300 cm 2/V·s was obtained with an activity of approximately 100%.

关 键 词：半导体材料 异质结 薄膜技术 掺杂技术 

分 类 号：TN304.055[电子电信—物理电子学]