带有位移检测功能的纳米级定位平台  

Nano-Positioning X-Y Stage with the Function of Displacement Detection

作　　者：王家畴[1] 荣伟彬[1] 李昕欣[2] 孙立宁[1] 

机构地区：[1]哈尔滨工业大学机器人研究所,哈尔滨150001 [2]中国科学院上海微系统与信息技术研究所传感技术国家重点联合实验室,上海200050

出　　处：《纳米技术与精密工程》2008年第5期376-382,共7页Nanotechnology and Precision Engineering

基　　金：国家杰出青年基金资助项目(50725518);国家高技术研究发展计划(863计划)资助项目(2007AA04Z315);长江学者和创新团队发展计划资助项目

摘　　要：为了解决纳米定位平台小型化、定位精度高的问题,采用体硅加工技术成功地研制了一种基于单晶硅的、带有位移检测功能的新型二自由度微型定位平台.介绍了定位平台的工作原理,通过理论计算和有限元模拟相结合的方法实现定位平台的结构设计.提出了一种面内侧壁压阻加工方法,成功地在定位平台上集成了压阻位移检测传感器.实验结果表明,有效驱动电压取23.68V时,定位平台最大单轴输出位移为10μm,运动平台的定位精度优于20nm;室温下压阻传感器的阻值为4.2kΩ,击穿电压为75V,在平台输出位移为10nm时,压阻器件的灵敏度(电阻相对变化)达到了3.6×10-5,完全满足设计要求.To meet the requests of miniaturization and high precision of nano-positioning X-Y stage, a novel 2-DOF single crystal silicon （ SCS ） nano-positioning micro X-Y stage with the function of displacement detection was successfully developed using silicon bulk machining, and its principle was introduced in this paper. Based on the combination of theoretical analysis and finite element simulation, a sidewall piezoresistor in plane technique was proposed to fabricate piezoresistor sensor in the micro X-Y stage. The experimental results verify the reasonable ness of micro X-Y stage design. Under the driving voltage of 23.68 V, the maximal displacement of X-Y stage is 10μm in each of the four directions, with the positioning precision of better than 20 nm. The piezoresistor sensor of 4.2 kΩ is tested using semi-automatic probe stage and its breakdown voltage is 75 V. The sensitivity of the fabricated piezoresistor, namely, the relative changes in resistance, is 3.6×10^-5 under the displacement of 10 nm, which fully meets the design requirements.

关 键 词：体硅微加工工艺 微型定位平台 面内侧壁压阻 有限元方法 压阻灵敏度 

分 类 号：TP274[自动化与计算机技术—检测技术与自动化装置]