基于Ⅲ-V族半导体材料的热光伏电池研究进展  

Recent Development of TPV Cells Based on Ⅲ-V Group Semiconductor Materials

作　　者：方思麟[1] 于书文[1] 刘维峰[1] 刘爱民[1] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116023

出　　处：《半导体技术》2008年第8期649-653,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60306001)

摘　　要：部分Ⅲ-V族化合物半导体具有较窄的禁带宽度,对红外发射体的温度要求较低,非常适宜制备热光伏(TPV)电池。简要介绍热光伏系统的基本结构,讨论了基于GaSb、InGaAsSb、InGaAs、InAsSbP几种主要窄带隙Ⅲ-V族化合物半导体的热光伏电池的研究情况,对它们的制备方法和主要性能参数进行了比较,分析了各自的优缺点,指出了我国热光伏技术的发展趋势。Some of Ⅲ-Ⅴ compound semiconductors are suitable to thermophotovohaic （TPV） cells as they have narrow band gap, no serious requirement to the temperature of infrared object. The basic structures of TPV system are introduced, the recent development of TPV cells are discussed based on some main compositions of Ⅲ-Ⅴ group semiconductor materials such as GaSh, InGaAsSb, InGaAs, InAsSbP, and made a comparison on their fabrication process and characters, the advantages and disadvantages are analyzed, at last the development trend of national TPV are pointed out.

关 键 词：热光伏 Ⅲ-V族半导体 窄带 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TN304.23[电子电信—物理电子学]