ZnO/(Ni)薄膜的制备与发光性能的研究  

Preparation of ZnO/(Ni) Thin Film and Studies on Its Photoluminescence Properties

作　　者：高飞[1] 吴再华[1] 刘晓艳[2] 

机构地区：[1]湖南信息职业技术学院,长沙410200 [2]中南大学材料科学与工程学院,长沙410083

出　　处：《半导体技术》2008年第8期701-704,共4页Semiconductor Technology

摘　　要：采用直流磁控溅射法制备了ZnO/(Ni)薄膜。研究了氧分压及Ni掺杂对ZnO薄膜的结构、光致发光特性及薄膜中的几种本征缺陷如氧空位(VO)、锌空位(VZn)、氧位锌(OZn)、锌位氧(ZnO)、间隙氧(Oi)、间隙锌(Zni)等浓度变化的影响。实验结果表明,随着氧分压的增大,466nm处的蓝色发光峰增强,掺Ni后蓝色发光峰也增强。通过分析,推测出蓝色发光峰可能是由ZnO薄膜中的间隙锌(Zni)点缺陷引起的。ZnO/（Ni） thin films were prepared by DC reactive magnetron sputtering. The oxygen partial pressures and Ni doped on the microstructure, photol properties effects of and the concentration of some intrinsic defects in ZnO thin films such as oxygen vacancy （Vo）, zinc vacancy （Vzn）, antisite oxygen （Ozn）, antisite zinc （Zno）, interstitial oxygen （Oi） and interstitial zinc （Zni） were studied respectively. Experimental results show that the intensity of the blue photoluminescence peak at 466 nm increases with increasing the oxygen partial pressure; for the sample doped with Ni, the intensity of the blue peak increases as well. According to the analysis, it is suggested that the blue photoluminescence peak observed in ZnO thin films might be attributed to interstitial zinc.

关 键 词：ZNO薄膜 光致发光 间隙锌 Ni掺杂 

分 类 号：O484.4[理学—固体物理]