Zn_(1-x)Mg_xSe外延合金薄膜的结构研究  

Sturcture Study of Zn_(1-x)Mg_xSe Films Grown on GaAs (100) Substrates

作　　者：魏彦锋[1] 黄大鸣[1] 王东红[1] 靳彩霞[1] 王杰[1] 沈孝良[2] 

机构地区：[1]复旦大学物理系和应用表面物理国家重点实验室,上海200433 [2]复旦大学分析测试中心,上海200433

出　　处：《Journal of Semiconductors》1997年第12期881-887,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用分子束外延方法在GaAs（100）衬底上生长了Zn1-xMgxSe三元合金薄膜（0≤x≤1），用X-射线衍射和喇曼散射谱7研究了薄膜的结构，发现对x较小的样品，合金层为单一的（100）面闪锌矿结构，（111）面的含量可以忽略．对x≈0．5的样品，合金层中（100）和（111）面的闪锌矿结构共存，两种结构呈现不同的组分，且（111）结构的x值总是小于（100）结构．对x＝1的样品，外延层呈现单一的（100）氯化钠结构．对不同结构和含量所作的定量分析表明，（111）面闪锌矿结构可能是Zn1-xMgxSe合金从（100）面闪锌矿结构向（100）面氯化钠结构转变的中间相．The Zn1-zMgxSe ternary alloys with x from 0 to 1 were grown on GaAs (100)substrates by molecular beam epitaxy. X-ray diffraction and Raman spectra were measured to study their crystal structure. For the samples with low alloy composition x, the films have the crystal structure of zinc blende (100). The other phases such as zinc blende (111) are negligible. For the samples with x-0. 5, both zinc blende (100) and (111)structures are found, as shown in X-ray diffraction and Raman spectra. The above two phases, however, show different alloy composition x. The fraction of (111) phase is estimated to be the maximum for the films with x(100)-0. 6. For the sample with x=1, i.e., the MgSe film, the crystal structure is the pure rocksalt. The experimental results suggest that the zinc blende (111) is the intermediate structure between zinc blende (100)and rocksalt (100).

关 键 词：分子束延法 外延生长 三元合金薄膜 半导体材料 

分 类 号：TN304.26[电子电信—物理电子学] TN304.054