新型真空微电子压力传感器特性研究和实验制作  

Study and Fabrication of Novel Vacuum Microelectronic Pressure Sensor

作　　者：夏善红[1] 刘加[2] 陈绍凤[3] 韩泾鸿[3] 崔大付[3] 

机构地区：[1]中国科学院电子学研究所传感技术国家重点实验室,北京100080 [2]清华大学电子工程系,北京100084 [3]中国科学院电子学研究所,北京100080

出　　处：《Journal of Semiconductors》1997年第12期901-906,共6页半导体学报（英文版）

基　　金：中国科学院院长基金;国家自然科学基金!69674030

摘　　要：本文提出并研究了新型的“台阶阴极”和“曲面阴极”真空微电子压力传感器，与普通的真空微电子压力传感器相比，新型传感器的阴极发射电流大大提高，使得输出信号易于检测，抗噪声能力增强，并在改善输出信号线性、提高灵敏度和扩展量程方面有很大优势．本文绘出了计算机模拟结果，简述了台阶阵列阴极和阳板压力敏感膜的制作，并展示了SEM照片．This paper proposes and investigates two new types of vacuum microelectronic pressure sensor, i. e. the sensor with a 'stepped cathode' or a 'curved cathode' instead of the conventional 'flat cathode'. The authors have calculated and compared the emission current of the novel cathodes with that of the conventional cathode. The calculation results show that the new sensors have the advantages of larger cathode emission current,which is easier to detect and less affected by noise. The new sensors also have better linearity of output signals, higher sensitivity and larger measurement range than the conventional vacuum microelectronic pressure sensor. The fabrication of the stepped cathode emission array and the anode pressure sensing film is described, and the SEM photographs are shown.

关 键 词：压力传感器 真空微电子器件 VME 

分 类 号：TN103[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]