Cu/Ta/SiO2/Si多层膜纳米压痕与压痕下微观结构的研究  

Study of nanoindentation and microstructure below the residual indent on Cu/Ta/SiO_2/Si multilayer

作　　者：卢茜[1] 吴子景[1] 吴晓京[1,2] Weidian Shen 蒋宾 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学微纳米电子平台,上海200433 [3]东密歇根州大学天文物理系,美国密歇根州伊普西兰蒂M148197 [4]上海集成电路R&D中心,上海201203

出　　处：《电子显微学报》2008年第4期282-286,共5页Journal of Chinese Electron Microscopy Society

基　　金：上海市科委资助项目(No.0552nm049);上海市重点学科建设项目资助(No.:B113)

摘　　要：Cu/Ta/SiO2/Si多层膜结构是目前集成电路制造工艺中的常见结构,其硬度与弹性模量通过纳米压入技术测得。为了表征纳米压痕下的形变微观区域,采用聚焦离子束加工出压痕截面,同时进行扫描电子、扫描离子显微观察,发现样品衬底发生开裂,多层膜结构出现分层现象。TEM分析表明分层出现在Ta/SiO2界面,说明这是该结构的一个薄弱环节。Nanoindentation was adopted to investigate the compound hardness and elastic modulus of Cu/Ta/SiO2/Si multilayer thin film system, which is a typical structure widely used in the manufacture of integrated circuit. In order to reveal the structure variance, a residual indent was cut by FIB. The cross-section of the residual indent was observed by scanning electron microscope （SEM）, as well as scanning ion microscope （SIM）. Transmission electron microscope （TEM） analysis showed that the delamination occurred at the interface between the Ta layer and SiO2 layer of the residual indent, suggesting a weak bonding which is prone to destruction under the relatively large loads.

关 键 词：Cu/Ta/SiO2/Si多层膜结构 纳米压入技术 压痕下微观结构 

分 类 号：TB383.2[一般工业技术—材料科学与工程]