高效率高亮度半导体激光器技术进展  

Recent Development of High-Efficiency High-Brightness Semiconductor Lasers

作　　者：李晨[1] 刘英斌[2] 宋雪云[3] 

机构地区：[1]中国电子科技集团公司,北京100846 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]南京大学扬州光电研究院,南京225009

出　　处：《半导体技术》2008年第9期748-751,755,共5页Semiconductor Technology

摘　　要：半导体激光器在军事领域和工业领域有着广泛应用,近年在性能参数方面有许多引人瞩目的进展。综述了提高功率转换效率的技术方法和途径,指出经过工艺优化后焦耳热和阈值热将是未来激光器的主要研究内容,介绍了波长稳定的激光器的两种制作方法,即外光栅法和内光栅法,激光器的波长稳定性达到0.1 nm/K以下。在外延材料结构中采用各种形式的大光腔结构设计,可以扩展近场光斑,从而使半导体激光器的光束发散角达到25°甚至更低。对较热门的近衍射极限激光器的制作方法进行了介绍,分析了不同方法的优缺点及应用情况。Semiconductor diode lasers are widely used in the field of military and industry. There are many important improvements of LD performance. The analysis and approach for improving the power conversion efficiency are introduced, the Joule heat and the loss below threshold would be the most critical factors for high efficiency LD in the future. Two approaches for stabilizing the wavelength are introduced, extra-cavity grating and cavity grating, the thermal shift of the wavelength would be less than 0.1 nm/K with the grating. Several designs of material layer sequence are executed to enlarge the size of the near field spot, namely large optical cavity （LOC） design, the vertical beam divergence could decrease to 25° or even less. The nearly diffraction-limit beam from laser diode cause a lot of interested in recent year, the design and the performance for using of these single-mode LD are analyzed.

关 键 词：激光二极管 功率转换效率 阈值电流密度 光束发散角 近衍射极限 

分 类 号：TN248.4[电子电信—物理电子学]