Cu／Ta／SiO2／Si薄膜在纳米压痕下的分层现象研究  

Research of Delamination Phenomenon Under Nanoindentation on Cu/Ta/SiO_2/Si Thin Film

作　　者：吴子景[1] 吴晓京[1,2] 卢茜[1] Shen Weidian 蒋宾[4] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学微纳电子平台,上海200433 [3]Department of Physics and Astronomy,Eastern Michigan University, Ypsilanti MI 48197 [4]上海集成电路研发中心,上海201203

出　　处：《半导体技术》2008年第9期787-790,共4页Semiconductor Technology

基　　金：上海市科委项目(0552nm049);上海市重点学科建设项目(B113)

摘　　要：采用磁控溅射技术在热氧化单晶硅衬底上先后淀积了厚度分别为50 nm的Ta膜和400 nm的Cu膜。使用纳米压入仪在样品表面进行压入测试,在薄膜表面制造出残留压痕。使用扫描电镜(SEM)、聚焦离子束(FIB)、透射电镜(TEM)和X射线能谱仪(EDX)对残留压痕形貌、剖面上的分层现象进行观察,确定分层所在的位置。发现在69 mN的最大载荷作用后,在Ta/SiO2界面处发生分层。分层的原因主要归结为在应力作用下,多层膜中各种材料的应变、弹性恢复能力不同。Ta layer 50 nm thick and Cu layer 400 nm thick were sputtered on thermal silicon dioxide surface. Nanoindentation test was conducted on the sample surface by nanohardness tester to produce residual indents on the thin film.Scanning electron microscope （SEM）, focused ion beam （FIB）, transmission electron microscope （TEM） and energy dispersive X-ray analysis （EDX） were adopted to observe the residual indent and determine the place of delamination. It was found that delamination occurred at Ta/SiO2 interface with a maximum load of 69 mN. The different strain and the ability of elastic recovery of each material under stress were supposed to be the main reason of the delamination.

关 键 词：Cu/Ta薄膜 纳米压痕 分层 

分 类 号：TN304.55[电子电信—物理电子学]