微电子器件静电损伤实验  

Experiment on Electrostatic Damage to Microelectronic Device

作　　者：杨士亮[1] 张欣卉[1] 姬国庆[1] 唐卫红[1] 李汉军[1] 

机构地区：[1]徐州空军学院,江苏徐州221000

出　　处：《半导体技术》2008年第9期801-802,809,共3页Semiconductor Technology

基　　金：国家自然科学基金资助项目(50237040)

摘　　要：在不同的静电放电模型下,通过实验研究了几种典型的半导体器件的静电敏感端对的静电放电情况和灵敏参数,由于外部环境、材料、结构和加工工艺不同,器件的静电损伤模式不同,其最大未损伤阈值和最小损伤阈值也不尽相同。实验结果表明,对于高频低噪声npn型硅三极管来说,反向CB结的静电敏感度要高于反向EB结的静电敏感度;ESD电流注入硅器件不同端对时,灵敏参数一般包括反向击穿电压、直流电流放大系数和反向漏电流,而极间电容和噪声系数对静电不敏感。Under different electrostatic discharge model, the electrostatic sensitive ends and sensitive parameter of some kinds of typical semiconductor devices different devices have a variety of electrostatic damage have been determined. The experiment indicates that pattern due to different material, structure and processing technology. The maximum undamaged threshold value and minimum damaged threshold value also do not match well. Experiment result shows, for the low noise silicon triode of high frequency of npn model, the electrostatic susceptibility of reverse CB knot will be higher than the electrostatic susceptibility of reverse EB knot. When ESD current pours into silicon device different ends, corresponding sensitive parameter is not the same. Sensitive parameter includes reverse breakdown voltage, direct current amplification coefficient.The reverse leakage current capacity and noise coefficient are not sensitive to electrostatic.

关 键 词：微电子器件 静电损伤 放电模型 

分 类 号：TN61[电子电信—电路与系统]