微波功率晶体管的热失效分析  

Analyze on Thermal Failure of Microwave Power Transistor

作　　者：刘红兵[1] 许洋[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第9期807-809,共3页Semiconductor Technology

摘　　要：微波功率晶体管是微波功率放大器中的核心器件,其热性能在很大程度上决定于封装管芯的管壳。针对某型号的微波功率晶体管在进行生产筛选的功率老化试验时出现的热失效问题进行分析与讨论,最终确定器件管壳内用于烧结管芯的氧化铍(BeO)上的多层金属化层存在质量缺陷,使管芯到BeO的热阻增大,因此出现了老化时部分器件失效现象。提出了预防措施,既可避免损失,也能保证微波功率晶体管在使用中的可靠性。Microwave power transistor is the key device of microwave power amplifier, its thermal characteristic mostly depends on package. Thermal failure of a type of microwave power transistor was analyzed and discussed, the power aging failure happened in the process of screening test. The analytical results show that quality defects exist on BeO substrate multi-layer metallization, which makes thermal resistance increase between chip and BeO substrate, finally leads to thermal failure. Preventive measures were given to avoid losing and insure the reliability of microwave power transistors.

关 键 词：微波功率晶体管 热失效 热阻 剪切力 

分 类 号：TN323.4[电子电信—物理电子学]