SiGe材料的组分表征研究与退火分析  

A Study on Composition and Annealing of SiGe Thin Films

作　　者：冯世娟[1] 李秋俊[1] 田岗纪之[2] 财满镇名[2] 

机构地区：[1]重庆邮电大学光纤通信技术重点实验室,重庆400065 [2]日本名古屋大学工学研究科结晶材料专攻,日本名古屋464-8603

出　　处：《微电子学》2008年第5期660-662,683,共4页Microelectronics

摘　　要：采用固相扩散法在n-Si(100)衬底上制备了两组退火条件不同的SixGe1-x薄膜。利用椭圆偏振光谱和二次离子质谱技术,对薄膜的厚度及组分分布进行了表征,两者具有较好的一致性。分析了退火对薄膜厚度、组分和应变的影响。成功得到了完全驰豫状态的SixGe1-x薄膜,可用于实际器件制作。SixGe1-x thin film was fabricated on n-Si （100） substrate by using solid-diffusing, The samples were annealed at different temperatures for different durations to investigate temperature and time effects on thickness and composition distribution. Physical properties of SixGe1-x layer, characterized by spectroellipsometry（SE） and secondary ion mass spectrum（SIMS）, were in good agreement. The dependence of relaxation on annealing was also studied. As a result, SixGe1-x film used for strained-Si device was successfully obtained.

关 键 词：SixGe1-x薄膜 椭圆偏振光谱 二次离子质谱 退火 组分分布 

分 类 号：TN304.055[电子电信—物理电子学]