转底炉法制备细晶粒铜最佳条件的研究  

Study on Best Conditions for Preparing Fine Crystalline Grain Copper by Rotary Hearth Furnace Principle

作　　者：吴中亮[1] 马瑞新[1] 艾琳 汪春平 孙鹏 张亚东 康勃[1] 王目孔[1] 

机构地区：[1]北京科技大学冶金与生态工程学院,北京100083 [2]金川镍钴研究设计院,金昌737102

出　　处：《材料导报（纳米与新材料专辑）》2008年第2期212-214,共3页

摘　　要：作为半导体用的铜靶材,其晶粒大小严重影响溅镀薄膜的品质,靶材晶粒的细化技术成为关键。依据转底炉法原理制备了一种片状铜,并对其晶粒尺寸的变化进行了研究,通过分析发现:坩埚底孔直径越小,底转盘转速越快,底转盘传热越好;在底转盘冷却效果好的情况下,下落点离底转盘的边缘越近,铜带的晶粒越小。The quality of film deposition by sputtering is affected seriously by the crystalline grain size of copper target as semiconductor materials. The technique to decrease the size of grain becomes very important. A kind of copper ribbon is prepared by the rotary hearth furnace principle in this report, and the changes of the crystalline grain sizes is studied. It is observed that the smaller the diameter of crucible bottom hole is, the more rapid the speed of bottom turnplate is, the better the heat move. The closer the edge of whereabouts from bottom turnplate is when the cooling of bottom turnplate is well, and the smaller the grain of copper ribbon is.

关 键 词：转底炉法 铜带 晶粒尺寸 

分 类 号：TQ174.758[化学工程—陶瓷工业] TG339[化学工程—硅酸盐工业]